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High-Efficiency O-Band Mach-Zehnder Modulator based on InGaAsP/Si Hybrid MOS Capacitor

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Abstract

We demonstrated O-band InGaAsP/Si hybrid MOS optical modulators using direct wafer bonding with a thin Al2O3 bonding interface. Owing to the large electron-induced refractive index change in InGaAsP, we successfully achieved VπL of 0.094 Vcm.

© 2017 Optical Society of America

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