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Integrated Ferroelectric BaTiO3/Si Plasmonic Modulator for 100 Gbit/s and Beyond

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Abstract

We present an integrated ferroelectric BaTiO3/Si plasmonic modulator and test its performance at 116 Gbit/s. The modulator has been tested to withstand temperatures up to 250°C.

© 2018 The Author(s)

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