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Pseudomorphic GeSn/Ge Multiple-quantum-well on Silicon for Photo Detection and Modulation at 2 µm Wavelength Range

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Abstract

Pseudomorphic GeSn/Ge multiple-quantum-well p-i-n photodiodes were studied at 2 µm range. Direct current and radio frequency measurements were performed to investigate the electrical and optical property of GeSn/Ge MQWs for photo detection and electro-absorption modulation.

© 2019 The Author(s)

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