Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

Waveguide Si-Ge avalanche photodiode based on hole-generated impact ionization

Not Accessible

Your library or personal account may give you access

Abstract

We report a waveguide Si-Ge avalanche photodiode using zero-change foundry processing. A 182 GHz gain-bandwidth product with a responsivity of 11.2 A/W at 1550 nm is experimentally demonstrated through hole-generated impact ionization.

© 2019 The Author(s)

PDF Article
More Like This
A 25Gbps low-voltage Waveguide Si-Ge Avalanche Photodiode

Zhihong Huang, Cheng Li, Di Liang, Kunzhi Yu, Charles Santori, Marco Fiorentino, Wayne Sorin, Samuel Palermo, and Raymond G. Beausoleil
STh4E.6 CLEO: Science and Innovations (CLEO:S&I) 2016

Loop Reflector Assisted Si-Ge Waveguide Avalanche Photodiodes

Yuan Yuan, Zhihong Huang, Xiaoge Zeng, Di Liang, Marco Fiorentino, and Raymond G. Beausoleil
SW3C.2 CLEO: Science and Innovations (CLEO:S&I) 2021

56GHz waveguide Ge/Si avalanche photodiode

Mengyuan Huang, Pengfei Cai, Su Li, Guanghui Hou, Naichuan Zhang, Tzung-I Su, Ching-yin Hong, and Dong Pan
W4D.6 Optical Fiber Communication Conference (OFC) 2018

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved