120 Gb s-1 Hybrid Silicon and Lithium Niobate Modulators with On-Chip Termination Resistor

Shihao Sun; Mingbo He; Mengyue Xu; Xian Zhang; Ziliang Ruan; Liu Liu; Xinlun Cai

doi:10.1364/OFC.2020.M2B.7

Optical Fiber Communication Conference (OFC) 2020
OSA Technical Digest (Optica Publishing Group, 2020),
paper M2B.7
•https://doi.org/10.1364/OFC.2020.M2B.7

120 Gb s^-1 Hybrid Silicon and Lithium Niobate Modulators with On-Chip Termination Resistor

Shihao Sun, Mingbo He, Mengyue Xu, Xian Zhang, Ziliang Ruan, Liu Liu, and Xinlun Cai

Optical Fiber Communication Conference 2020

San Diego, California United States
8–12 March 2020
ISBN: 978-1-943580-71-2

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High-Speed Integrated Modulators (M2B)

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S. Sun, M. He, M. Xu, X. Zhang, Z. Ruan, L. Liu, and X. Cai, "120 Gb s-1 Hybrid Silicon and Lithium Niobate Modulators with On-Chip Termination Resistor," in Optical Fiber Communication Conference (OFC) 2020, OSA Technical Digest (Optica Publishing Group, 2020), paper M2B.7.

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Abstract

We demonstrated hybrid silicon and lithium niobate Mach-Zehnder modulators with on-chip termination resistor. The device shows high electro-optic bandwidth up to 60 GHz, low V_π of 2.25 V and low insertion loss of 2 dB.

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