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Conferences > OFC > 2021 > F2C > F2C.4

High Speed and Low Dark Current InGaAs Photodiodes on CMOS-Compatible Silicon by Heteroepitaxy

Bowen Song, Bei Shi, Si Zhu, Simone Šuran Brunelli, and Jonathan Klamkin

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Abstract

High speed InGaAs photodiodes were realized on (001) Si by direct heteroepitaxy, demonstrating low dark current, high responsivity, a bandwidth of 11 GHz and up to 30 Gbps operation at a wavelength of 1550 nm.

© 2021 The Author(s)

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