Monolithic InGaAs/InP MQW Nanolasers on SOI Substrate

Yajie Li; Yajie Li; Yajie Li; Wenyu Yang; Wenyu Yang; Wenyu Yang; Shilei Du; Xuliang Zhou; Xuliang Zhou; Xuliang Zhou; Mengqi Wang; Mengqi Wang; Mengqi Wang; Hongyan Yu; Hongyan Yu; Hongyan Yu; Yejin Zhang; Yejin Zhang; Jiaoqing Pan; Jiaoqing Pan; Jiaoqing Pan

doi:10.1364/ISST.2019.JTh4E.6

International Photonics and OptoElectronics Meeting 2019 (OFDA, OEDI, ISST, PE, LST, TSA)
OSA Technical Digest (Optica Publishing Group, 2019),
paper JTh4E.6
•https://doi.org/10.1364/ISST.2019.JTh4E.6

Monolithic InGaAs/InP MQW Nanolasers on SOI Substrate

Yajie Li, Wenyu Yang, Shilei Du, Xuliang Zhou, Mengqi Wang, Hongyan Yu, Yejin Zhang, and Jiaoqing Pan

Optical Fibers, Fiber-based Devices and Applications 2019

Wuhan China
11–14 November 2019
ISBN: 978-1-943580-72-9

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Y. Li, W. Yang, S. Du, X. Zhou, M. Wang, H. Yu, Y. Zhang, and J. Pan, "Monolithic InGaAs/InP MQW Nanolasers on SOI Substrate," in International Photonics and OptoElectronics Meeting 2019 (OFDA, OEDI, ISST, PE, LST, TSA), OSA Technical Digest (Optica Publishing Group, 2019), paper JTh4E.6.

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Abstract

We report the optical pumped InGaAs/InP MQW nanolasers directly grown on the SOI substrate after etching away part top Si on both sides of the nanowires to reduce the optical leakage loss.

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