Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
Conferences > OFS > 1996 > We4 > We44

High Power Semiconductor Laser Diodes for OTDRs

Y. Sasaki, Y. Furushima, T. Hosoda, T. Murakami, and H. Hasumi

Not Accessible

Your library or personal account may give you access

Abstract

We present a design concept of high power laser diodes (LDs) for Optical Time Domain Reflectometer (OTDR), taking carrier transport in strained multiple quantum wells (s-MQW) into consideration. Optical output power has reached over 300mW at 1.3µm, 1.55µm and 1.65µm, respectively.

© 1996 IEICE

PDF Article
More Like This
High Power Semiconductor Laser Diodes for OTDRs

Y. Sasaki, Y. Furushima, T. Hosoda, T. Murakami, and H. Hasumi
Ex12 Optical Fiber Sensors (OFS) 1996

1.625-μm High-Power Strained Multiple Quantum Well Lasers for Optical Time-Domain Reflectometers

Tsutomu Munakata, Yasumasa Kashima, Shigehiro Kusumoto, Akio Matoba, and Hiroshi Takano
Tu26 Optical Fiber Sensors (OFS) 1996

High Power Pulsed Semiconductor Laser for Eyesafe Laser Range Finders

Lars Andersson, Ingmar Renhorn, Stefan Nilsson, and Tiina Klinga
CThI82 The European Conference on Lasers and Electro-Optics (CLEO/Europe) 1996

View More...
Select as filters
Select Topics Cancel
Top
       
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.
Privacy | Terms of Use