Polishing CVD Silicon Carbide*

Baruch A. Fuchs; Norman J. Brown

doi:10.1364/OFT.1986.WB7

Workshop on Optical Fabrication and Testing
(Optica Publishing Group, 1986),
paper WB7
•https://doi.org/10.1364/OFT.1986.WB7

Polishing CVD Silicon Carbide^*

Baruch A. Fuchs and Norman J. Brown

Optical Fabrication and Testing 1986

Seattle, Washington United States
21–23 October 1986
ISBN:

From the session
Session 2 (WB)

Not Accessible

Your library or personal account may give you access

Get PDF
Email
Share
Get Citation
Copy Citation Text
B. A. Fuchs and N. J. Brown, "Polishing CVD Silicon Carbide*," in Workshop on Optical Fabrication and Testing, (Optica Publishing Group, 1986), paper WB7.

Export Citation
- BibTex
- Endnote (RIS)
- HTML
- Plain Text
Citation alert
Save article

Abstract

Silicon carbide has a combination of properties that place it high on the list of candidates for sychrotron radiation grazing incidence reflectors. The chemical vapor deposited form has a very fine structure that permits the polisher to obtain very smooth surfaces. 5 cm diameter flats have been polished to about 1 Å rms in the 5 to 400 cycles per milimeter spatial frequency range.

PDF Article

More Like This

Removal Rates, Polishing and Subsurface Damage of Chemical Deposited Silicon Carbide

Baruch A. Fuchs
TuAA5 Optical Fabrication and Testing (OF&T) 1987

CVD silicon carbide—a promising material for low-scatter mirrors

Jean M. Bennett, Phillip C. Archibald, Randle V. De’wees, Terence M. Donovan, Michael A. Pickering, Kenneth Scribner, Michael Beecroft, Richard S. Dummer, and John C. Stover
ThV2 OSA Annual Meeting (FIO) 1990

Adhesion of Diamond Coatings Synthesized by Oxygen-Acetylene Flame CVD on Tungsten Carbide

S. Marinković, S. Stanković, and A. Dekanski
DAFW513 Applications of Diamond Films and Related Materials (DFM) 1995

Previous Article Next Article