Abstract
Extreme ultraviolet (EUV) projection lithography is currently being developed to achieve sub-100 nm critical dimension pattern transfer. Such severe performance requirements place unprecedented demands on phase measuring interferometry which must provide a measurement accuracy of ~ 1 Å based on acceptable wavefront tolerances of ~2 Å. Furthermore, since these lithography systems utilize resonant reflective structures, the interferometry must be performed at the operational wavelength, which is in the 5 nm to 15 nm range.
© 1998 Optical Society of America
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