Fabrication and metrology of high NA imaging optics for EUV-lithography

Udo Dinger

doi:10.1364/OFT.2002.OTuC4

Optical Fabrication and Testing
OSA Trends in Optics and Photonics Series (Optica Publishing Group, 2002),
paper OTuC4
•https://doi.org/10.1364/OFT.2002.OTuC4

Fabrication and metrology of high NA imaging optics for EUV-lithography

Udo Dinger

Optical Fabrication and Testing 2002

Tucson, Arizona United States
3–5 June 2002
ISBN: 1-55752-719-9

From the session
Lithography (OTuC)

Open Access

Get PDF
Email
Share
Get Citation
Copy Citation Text
U. Dinger, "Fabrication and metrology of high NA imaging optics for EUV-lithography," in Optical Fabrication and Testing, A. Sawchuk, ed., Vol. 76 of OSA Trends in Optics and Photonics Series (Optica Publishing Group, 2002), paper OTuC4.

Export Citation
- BibTex
- Endnote (RIS)
- HTML
- Plain Text
Citation alert
Save article

Abstract

EUVL, i.e. microlithography at 13nm is one of the most likely technologies to satisfy the requirements of the 50nm-node and below of the IC-manufacturing roadmap The development of the first step and scan machines meeting production requirements of field size and resolution is in progress. A key component of these machines will be a diffraction limited, off-axis mirror system with aspherical surfaces.

PDF Article

More Like This

The Fabrication and Testing of Optics for EUV Projection Lithography1,2

John S. Taylor, Gary E. Sommargren, Donald W. Sweeney, Russell M. Hudyma, and Eric M. Gullikson
OTuD.1 Optical Fabrication and Testing (OF&T) 1998

Optical System for EUV Lithography

John S. Taylor
OWA7 Optical Fabrication and Testing (OF&T) 2000

An Overview of Optical Systems for 30 nm Resolution Lithography at EUV Wavelengths

Russ Hudyma
IMD1 International Optical Design Conference (IODC) 2002

Previous Article Next Article