Abstract

In-situ Rutherford backscattering spectrometry measurements of electrochromic devices were made to better understand their electrochemical performance. ⁴He⁺⁺ ions with energies ranging from 2.0 to 5.0 MeV were incident on cycling electrochromic devices. We experimentally determined the changing film composition as a function of the applied device voltage. These results, when combined with transmission electron microscopy data, yield film densities as a function of depth. Significant elemental diffusion was noted in comparison with the as-deposited layer structure. We will also discuss experimental RBS analysis techniques for other complex multilayer thin film devices.

© 1992 Optical Society of America