Abstract

This paper addresses the optical properties of Silicon Carbide in thin film form produced by Ion assisted deposition. A bulk index of approximately 2.55 [1] is attractive for a range of optoelectronic applications including semiconductor anti-reflection coatings and optical filters. Its optical properties were investigated using thin films formed using conventional PVD techniques with an End-Hall effect Ion Source. Various gases were introduced into the ion source during deposition, and the optical properties of the films measured. Best indices, approaching bulk indices, were found using Methane. The optical properties were measured in the visible and near infrared spectral regions. As a demonstration of the viability of the processing technique a simple SiC based two layer anti-reflexion coating on glass was created using Methane and Oxygen as the ion source gases.

© 1998 Optical Society of America