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Conferences > OIC > 1998 > TuC > TuC.3

Modelisation of optical properties of Sn and Ge doped ln2O3

E. Monterrat, Ph. Boy, and C. Marcel

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Abstract

Ten percent tin doped In2O3 films (ITO) and other heavily doped wide band gap oxide semiconductor films are transparent in the visible range and present a metallic behavior in the IR region. This remarkable combination of properties is very interesting for thermal applications and has been intensively studied in the past decade. Optical properties of these films are known to be strongly dependent on their electrical conductivity and are well modelized with a Drude model or a Drude-Lorentz model.[1,2,3,4]

© 1998 Optical Society of America

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