Abstract

This paper presents the results of an investigation of optical interference effects in several semiconducting thin film multilayer systems. The multilayers were formed on Si and GaAs substrates with different doping levels and the crystal orientation. The layers are composed of both the group IV such as SiGe and group III-V compound semiconductors such as AlGaAs. The optical interference effects in both the infrared and the visible regions are reported in an attempt to evaluate the performance of these layers for use as possible narrow bandstop (notch) filters on semiconductor substrates. The effects of nanostructuring on optical interference are also reported in these multilayer systems.

© 1998 Optical Society of America