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Absorbing and scattering centers in subthreshold irradiation processes

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Abstract

Absorbing defects are suspected to play a part in laser damage of thin films especially in the UV spectrum1,2. To improve the coating technology, it seems to be very useful to get more information on the localized defects and their relation to damage threshold: the size and the nature of these defects are important questions. Simultaneous mapping of absorption and scattering together and their correlation give specific information about the nature of defects3. Furthermore during their life, UV optical components have to withstand millions of high intensity pulses and can be damaged by long term subthreshold irradiation. Localized losses can play an important part in these phenomena. The present work tries to elucidate the role of absorbing and/or scattering defects in titania and silica films deposited by DIBS on fused silica substrates and irradiated with increasing numbers of shot at subthreshold fluences.

© 1998 Optical Society of America

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