Microstructure determination of porous Si:H samples by reflectance methods

Jerzy Ciosek

doi:10.1364/OIC.2007.TuA10

Optical Interference Coatings
OSA Technical Digest (CD) (Optica Publishing Group, 2007),
paper TuA10
•https://doi.org/10.1364/OIC.2007.TuA10

Microstructure determination of porous Si:H samples by reflectance methods

Jerzy Ciosek

Optical Interference Coatings 2007

Tucson, Arizona United States
3–8 June 2007
ISBN: 1-55752-841-1

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Coating Microstructure (TuA)

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J. Ciosek, "Microstructure determination of porous Si:H samples by reflectance methods," in Optical Interference Coatings, OSA Technical Digest (CD) (Optica Publishing Group, 2007), paper TuA10.

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Abstract

Microstructure of Si(001):H Czochralski grown single crystalline wafer with 50 nm thick surface Si0₂ layer is investigated. Hydrogen dose implantation (D ≤ 4×10¹⁶ cm⁻²) results in a creation of porous (spongy) -like buried Si layer.

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