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Conferences > OIC > 2007 > TuE > TuEPDP2

A novel Atomic Layer Deposition process for depositing metal fluoride thin films

Tero Pilvi, Mikko Ritala, Markku Leskelä, Martin Bischoff, and Norbert Kaiser

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Abstract

This paper introduces a novel Atomic Layer Deposition (ALD) process for preparation of fluoride thin films at temperature range of 225-450 °C. The crystallinity, morphology, composition, thicknesses, refractive indices, and transmittance of the films were analyzed. Low impurity levels were obtained at 350-400 °C with good stoichiometry. Refractive indices were 1.34-1.42 for MgF2, 1.43 for CaF2 and 1.57-1.61 for LaF3 films.

© 2007 Optical Society of America

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