Abstract
Insulating film with high coverage can be prepared by RAS (Radical Assisted Sputtering) in combination with bias voltage applying. By applying bias voltage during RAS, selective positive ion etching toward patterned substrate on rotating drum with negative charge occurs at the same time as sputtering. Using this ion etching effect, void-free insulating film can be prepared on pattered substrate, resulting in high coverage coating. In SiO2 bias voltage coating, it was suggested that densification of SiO2 occurred at high bias power. This technique shows promise for the application of electric devices such as surface acoustic wave (SAW) filter.
© 2013 Optical Society of America
PDF ArticleMore Like This
T. Sugawara, S. Agatsuma, S. Samori, and E. Nagae
MC.7 Optical Interference Coatings (OIC) 2016
Ekishu Nagae, Takeshi Sakurai, and Shigeharu Matsumoto
MB5 Optical Interference Coatings (OIC) 2001
Yousong Jiang, Yizhou Song, Ming Li, Haiqian Wang, and J.G. Hou
ME4 Optical Interference Coatings (OIC) 2004