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Optical Characterization of Electron-Beam Evaporated Si, DyF3, MgF2, and MgO Thin Films from Visible to Mid-Infrared Ranges

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Abstract

Si, DyF3, MgF2, and MgO thin films produced by electron-beam evaporation on ZnSe substrates were characterized in spectral ranges from 0.4-0.6 um to 10-14 µm. Optical constants of Si are described by a non-parametric model.

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