Abstract
We propose a new platform for surface enhanced infrared absorption spectroscopy by combining a polar semiconductor with a phase change material. The surface phonon polariton resonance on SiC is modified by the change in refractive index of GeSbTe. As a model study for the tuning capability a GeSbTe patch structure was fabricated on the SiC surface to generate a localized or confined surface phonon polariton.
© 2017 Optical Society of Japan
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