Abstract

Photonics platforms with high nonlinear figures of merit are sought after for their ability to process optical signals with high efficiencies. CMOS-based platforms are especially significant owing to their ability to be manufactured alongside electronics. We present recent developments in nonlinear optical signal processing on the ultra-silicon-rich nitride platform. Using bandgap engineering, we achieve films with a high Kerr nonlinearity of 2.8×10⁻¹³ cm²/W, a large bandgap of 2.1eV and negligible two photon absorption at the telecommunications wavelength. Devices leveraging nonlinear parameters as large as 550W⁻¹/m are demonstrated for high gain optical parametric amplifiers, wavelength conversion and supercontinuum sources.

© 2017 Optical Society of Japan