Mid-IR Plasmonics with Engineered Semiconductor Metals

S. Law; C. Roberts; S. Inampudi; A. Rosenberg; V. Podolskiy; D. Wasserman

doi:10.1364/OPM.2014.OW1D.3

Research in Optical Sciences
OSA Technical Digest (online) (Optica Publishing Group, 2014),
paper OW1D.3
•https://doi.org/10.1364/OPM.2014.OW1D.3

Mid-IR Plasmonics with Engineered Semiconductor Metals

S. Law, C. Roberts, S. Inampudi, A. Rosenberg, V. Podolskiy, and D. Wasserman

Workshop on Optical Plasmonic Materials 2014

Messe Berlin, Berlin Germany
18–20 March 2014
ISBN: 978-1-55752-995-4

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OPM Session 1 (OW1D)

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S. Law, C. Roberts, S. Inampudi, A. Rosenberg, V. Podolskiy, and D. Wasserman, "Mid-IR Plasmonics with Engineered Semiconductor Metals," in Research in Optical Sciences , OSA Technical Digest (online) (Optica Publishing Group, 2014), paper OW1D.3.

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Abstract

We investigate the utility of heavily doped semiconductors as plasmonic materials for mid-IR applications. The wavelength flexibility and design-ability of these materials allow for the demonstration of nanophotonic structures and devices for long-wavelength IR light.

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