Abstract

Multi-material monolithic integration can be achieved through the integration of thin film compound semiconductor devices with silicon circuitry. This type of integration enables the system designer to use the optimal material to achieve the desired cost and performance requirements of the system. Silicon, the acknowledged leading technology for low cost electronics, is a particularly attractive host substrate on which to integrate thin film devices with optoelectronic capabilities. In this paper, we report the integration of InP-based emitters and detectors with a single silicon circuit which contains an emitter drive circuit and a detector amplifier circuit. These optoelectronic integrated circuits (OEICs), which operate at a wavelength of 1.3 μm, are useful as receivers and transmitters for optoelectronic interconnection schemes which include three dimensional, massively parallel computational systems using through-silicon wafer optoelectronic interconnects, grating/waveguide optical interconnection layers for multichip modules, and optical fiber.

© 1995 Optical Society of America