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Effect of temperature-dependent carrier recombination on the efficiency droop in InGaN/GaN single quantum well (SWQ) light emitting diode (LED) chips

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Abstract

The electrical and thermal behaviors of LED are systematically investigated using a numerical method. The focus is on how the temperature-dependent carrier recombination induces an efficiency droop. The thermal effect enhances the efficiency droop.

© 2016 Optical Society of America

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