Photo-EMF Effect under the Influence of Nonlinear Hot-Electron Transport in Photorefractive Quantum Wells Diodes

E. Hernández-Hernández; C. García-Lara; P. Rodriguez; R. Ramos-García; D. Nolte; M.R. Melloch

doi:10.1364/PEMD.2001.410

Photorefractive Effects, Materials, and Devices
OSA Trends in Optics and Photonics (Optica Publishing Group, 2001),
paper 410
•https://doi.org/10.1364/PEMD.2001.410

Photo-EMF Effect under the Influence of Nonlinear Hot-Electron Transport in Photorefractive Quantum Wells Diodes

E. Hernández-Hernández, C. García-Lara, P. Rodriguez, R. Ramos-García, D. Nolte, and M.R. Melloch

Photorefractive Effects, Materials, and Devices 2001

Delavan, Wisconsin United States
ISBN: 1-55752-693-1

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Photorefractive Quantum Wells (PQW)

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E. Hernández-Hernández, C. García-Lara, P. Rodriguez, R. Ramos-García, D. Nolte, and M. R. Melloch, "Photo-EMF Effect under the Influence of Nonlinear Hot-Electron Transport in Photorefractive Quantum Wells Diodes," in Photorefractive Effects, Materials, and Devices, G. Salamo and A. Siahmakoun, eds., Vol. 62 of OSA Trends in Optics and Photonics (Optica Publishing Group, 2001), paper 410.

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Abstract

In this work we present results on photoconductivity and non-steady-state photoelectromotive force (PEMF) currents in multiple photorrefractive quantum wells (PRQW) of GaAs/AlGaAs in longitudinal configuration under dc applied electric fields EQ. Velocity saturation and negative differential resisitivity are observed on the photoconductivity and therefore in the PEMF current. We also observe that the peak of the PEMF signal (which occurs at modulation frequency equal to the inverse of the dielectric relation time) is independent of the applied field for E₀<11.3 kV/cm.

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