Abstract
We measured the electro-optical properties of Sn2P2S6 single crystals for electric fields parallel to the crystallographic x-axis. A direct interferometric technique is used and unclamped as well as clamped values are determined. The measured coefficients are large, with a maximum of 174 ± 10 pm/V for the unclamped coefficient at λ = 633 nm. The corresponding reduced half-wave voltage is Vπ = 124 V.
© 2003 Optical Society of America
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