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Growth and Photodiffractive Characterization of Vanadium Doped CdZnTe (Cl,As) and ZnTe (Al,Sc)

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Abstract

We applied time-resolved picosecond four-wave mixing technique for studies of free-carrier and photorefractive nonlinearities in high-resistivity CdZnTe and ZnTe crystals doped with deep vanadium impurity and codoped by shallow donors. Electrical and optical activity of dopants, which participate in nonequilibrium carrier generation, recombination, transport, and formation of a space-charge field at 1064 nm excitation was investigated and is discussed.

© 2005 Optical Society of America

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