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Control of hole-electron competition in photorefractive semiconductors by incoherent auxiliary illumination

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Abstract

We present the results of experimental and theoretical study of electron-hole competition in photorefractive semiconductors and demonstrate that wavelength of auxiliary incoherent illumination is an efficient control factor for photorefractive effects in these crystals. We show that the illumination at certain wavelength noticeably enhances the photorefractive effect. Our theoretical analysis is based on two-band two-defect model. It was supported by two-wave mixing experiments with ac-field biased CdTe:Ge crystal. The dependence of optimal auxiliary illumination wavelength, which yields maximum enhancement of two-wave mixing gain, on recording wavelength, spatial frequency, and intensity beam ration is presented.

© 2005 Optical Society of America

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