Characterization of TEGFETs and MESFETs Using the Electro-Optic Sampling Technique

K.E. Meyer; D.R. Dykaar; G.A. Mourou

doi:10.1364/PEO.1985.ThC2

Topical Meeting on Picosecond Electronics and Optoelectronics
(Optica Publishing Group, 1985),
paper ThC2
•https://doi.org/10.1364/PEO.1985.ThC2

Characterization of TEGFETs and MESFETs Using the Electro-Optic Sampling Technique

K.E. Meyer, D.R. Dykaar, and G.A. Mourou

Picosecond Electronics and Optoelectronics 1985

Incline Village, Nevada United States
13–15 March 1985
ISBN:

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Ultrafast Electronics (ThC)

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K. E. Meyer, D. R. Dykaar, and G. A. Mourou, "Characterization of TEGFETs and MESFETs Using the Electro-Optic Sampling Technique," in Topical Meeting on Picosecond Electronics and Optoelectronics, (Optica Publishing Group, 1985), paper ThC2.

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Abstract

It has been demonstrated that the electro-optic sampling technique can be used to characterize electrical signals with rise times as short as .46 ps.¹ In this report we show the application of this sampling technique to the measurement of the transient response of GaAs TEGFETs and MESFETs.

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