Cross Modulation of Light in SI Semiconductor Materials In the presence of Electric fields

L. M. Walpita; W. S. C. Chang; H. H. Wieder; T. Van Eck

doi:10.1364/PEO.1985.WE2

Topical Meeting on Picosecond Electronics and Optoelectronics
(Optica Publishing Group, 1985),
paper WE2
•https://doi.org/10.1364/PEO.1985.WE2

Cross Modulation of Light in SI Semiconductor Materials In the presence of Electric fields

L. M. Walpita, W. S. C. Chang, H. H. Wieder, and T. Van Eck

Picosecond Electronics and Optoelectronics 1985

Incline Village, Nevada United States
13–15 March 1985
ISBN:

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L. M. Walpita, W. S. C. Chang, H. H. Wieder, and T. Van Eck, "Cross Modulation of Light in SI Semiconductor Materials In the presence of Electric fields," in Topical Meeting on Picosecond Electronics and Optoelectronics, (Optica Publishing Group, 1985), paper WE2.

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Abstract

Various optical devices are currently being investigated for optical signal processing and communication^[1,2]. In this paper we will discuss cross modulation of light observed in semiconductor materials. This effect could potentially be used to obtain optical logic functions such as AND gate.

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