Abstract

We report the application of electro-optic sampling[1-3] to measurements of waveforms internal to a high-speed InP integrated circuit. This is possible because InP is an electro-optic material with electro-optic coefficient comparable to that of GaAs. Waveforms and propagation delays through a two stage InGaAs/InP metal-insulator-semiconductor FET (MISFET) inverter circuit[4,5] have been measured. The observed propagation delay through an individual FET is 21±7 ps. The measurement uses an electro-optic sampling system based on a 1.3 μm InGaAsP injection laser[3] that is gain-switched. This work extends to InP-based circuits previously developed techniques for non-invasive sampling using the electro-optic effect in GaAs[2].

© 1987 Optical Society of America