Abstract

Optoelectronic switches, fabricated on amorphous- and implantation-damaged semiconductor thin films, have proven to be among the fastest of the picosecond photoconductors, with switching times less than 50 ps [1]. Ion implantation offers a systematic way to vary the disorder of materials from partially damaged to amorphous. With such materials, the relationship between implantation damage and carrier transport can be explored. Smith and Auston measured the dose dependence of the picosecond photoresponse for oxygen implanted into SOS, reporting an excess carrier lifetime of less than 10 ps [2]. Because oxygen itself may alter the material properties in addition to damaging the crystal, we have studied the photoresponse of Si-implanted SOS. The transport properties as a function of device gap length and bias voltage were measured. Raman scattering and resistivity measurements were made to characterize the material and were compared with the photoconductivity data.

© 1987 Optical Society of America