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Theoretical active impurity levels of Cr and Mn for photorefractive effects in BaTiO3

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Abstract

The band model1) is commonly used to describe photorefractive effects, assuming that optically excited carriers (electrons or holes), from band gap impurities levels, migrate to the dark regions of the crystal where they are trapped. If iron has been put forward to give predominant photorefractive species in BaTiO3, either in intentionally doped2) or in as said pure crystals3), others 3d transitions elements could play a part in these mechanisms, as they tend also to behave as deep centers, and can significantly affect the electronic properties of the material involved.

© 1987 Optical Society of America

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