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Polarization Independent Optical Modulation with Tensile-Strained GaAs-InAlAs Quantum Wells Grown on GaAs Substrate

Yuen-Chuen Chan and Kunio Tada

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Abstract

Polarization independent optical modulation at a wavelength range of around 860nm with tensile-strained GaAs-InAlAs quantum wells grown on a relaxed non-pseudomorphic InAlAs grid layer has been studied and demonstrated by theoretical simulations and waveguide absorption measurements.

© 1993 Optical Society of America

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