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Conferences > PS > 1995 > PThD > PThD3

Low-voltage electroabsorption in InGaAsP/InP multiple-quantum-well electron transfer structures

Ulf Olin, Dana Varga, Krister Fröjdh, Johan Wallin, and Gunnar Landgren

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Abstract

Fast low-chirp electro-optic modulators are essential for applications as external modulators in long-haul communication systems. For integration with high-speed drive electronics, the modulation voltage should be restricted to preferably the sub-volt region. Barrier reservoir and quantum well electron transfer structures (BRAQWETs) have shown a great promise for these applications, due to its large electro-refractive effects[1] and fast intrinsic speed, which make them particularly suitable for high-speed Mach-Zehnder interferometric amplitude modulators[2].

© 1995 Optical Society of America

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