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Opto-electronic properties of different black silicon structures passivated by thermal ALD deposited Al2O3

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Abstract

Black silicon (b-Si) structures offer improved light absorption but require appropiate surface passivation for photovoltaic applications. Here, we compare the opto-electronic performance of different wet and dry etched b-Si structures passivated by thermal ALD deposited Al2O3.

© 2013 Optical Society of America

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More Like This
Passivation of optically black silicon wafers by atomic layer deposited Al2O3 films

Martin Otto, Matthias Kroll, Thomas Käsebier, Roland Salzer, Johannes Ziegler, Alexander Sprafke, and Ralf B. Wehrspohn
PW1B.3 Optical Nanostructures and Advanced Materials for Photovoltaics (PV) 2012

Surface passivation of black silicon by thermal ALD deposited aluminum oxide

M. Otto, M. Kroll, T. Käsebier, M. Ernst, R. Salzer, and R. B. Wehrspohn
JWE7 Optical Instrumentation for Energy and Environmental Applications (E2) 2011

Photoluminescence enhancement in porous SiC passivated by atomic layer deposited Al2O3 films

Weifang Lu, Yoshimi Iwasa, Yiyu Ou, Satoshi Kamiyama, Paul Michael Petersen, and Haiyan Ou
SM1R.5 CLEO: Science and Innovations (CLEO_SI) 2016

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