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Conferences > PV > 2013 > PM1C > PM1C.3

Opto-electronic properties of different black silicon structures passivated by thermal ALD deposited Al2O3

Martin Otto, Matthias Kroll, Thomas Käsebier, Xiaopeng Li, Benjamin Gesemann, Kevin Füchsel, Johannes Ziegler, Alexander Sprafke, and Ralf B. Wehrspohn

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Abstract

Black silicon (b-Si) structures offer improved light absorption but require appropiate surface passivation for photovoltaic applications. Here, we compare the opto-electronic performance of different wet and dry etched b-Si structures passivated by thermal ALD deposited Al2O3.

© 2013 Optical Society of America

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