Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

Optical-Electrical-Thermal Effect on Efficiency Droop in Large Size Light Emitting Diode Chips

Not Accessible

Your library or personal account may give you access

Abstract

A numerical simulation is performed to study the electrical, thermal and optical behaviors of LEDs from low to high electrical power. The carrier leakage is the main mechanism which induces the droop.

© 2014 Optical Society of America

PDF Article
More Like This
Effect of temperature-dependent carrier recombination on the efficiency droop in InGaN/GaN single quantum well (SWQ) light emitting diode (LED) chips

Quoc-Hung Pham, Jyh-Chen Chen, Farn-Shiun Hwu, and Huy-Bich Nguyen
JW4A.7 Fourier Transform Spectroscopy (FTS) 2016

Importance of the radiative recombination rate to efficiency droop in InGaN-based light-emitting diodes

Jong-In Shim, Hyunsung Kim, and Dong-Soo Shin
ATh4I.2 Asia Communications and Photonics Conference (ACPC) 2014

Effect of polarization on the efficiency droop of InGaN/GaN single quantum well LED chips

Quoc-Hung Pham, Farn-Shiun Hwu, Huy-Bich Nguyen, and Jyh-Chen Chen
DM2D.2 Solid-State and Organic Lighting (SOLED) 2015

References

You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access Optica Member Subscription

Select as filters


Select Topics Cancel
© Copyright 2022 | Optica Publishing Group. All Rights Reserved