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Inverted silicon nanocones for a next generation of silicon-based optoelectronics

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Abstract

The study introduces a novel type of photonic structure, the inverted silicon nanocone (SiNC). It exhibits a unique photonic mode formation, and permits the design of novel silicon-based optoelectronic devices such as solar cells, light emitting diodes or optical sensors.

© 2016 Optical Society of America

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