Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

Studies and Simulation of Solar Cells With Triple-Junction Concentration Based on III-V Semiconductors (GaInP/GaAs/Ge)

Not Accessible

Your library or personal account may give you access


Multi-junction photovoltaic devices can achieve a high level of conversion efficiency. The solar cell with triple-junction based on III-V semiconductors (GaInP/GaAs/Ge) can maintain its characteristics at optimal values, depending on temperature and its subcells thicknesses.

© 2017 Optical Society of America

PDF Article
This paper was not presented at the conference

More Like This
Numerical Simulations of Temperature Dependence of High-Efficiency Multi-Junction Solar Cells Under Concentrated Sunlight

J. F. Wheeldon, A. W. Walker, O. Thériault, M. Yandt, and K. Hinzer
JTuB21 Access Networks and In-house Communications (ANIC) 2011

Triple Junction GaAs High Efficiency Epitaxial Lift-Off Solar Cells

D. Cardwell and N. Pan
OW5C.6 Optics for Solar Energy (SOLED) 2018

III-V nanowire solar cells

R.R. LaPierre
831203 Asia Communications and Photonics Conference and Exhibition (ACP) 2011

Select as filters

Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved