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InGaAs/AlGaAs Quantum Dot Intermediate Band Solar Cells Fabricated on GaAs (311)B Substrate

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We have fabricated multi-stacked InGaAs/AlGaAs quantum dot (QD) solar cells on GaAs (311)B substrate in order to clarify the structural, optical, and electrical properties of QDs which exhibit superior in-plane spatial ordering and the effect of a large energy band offset using AlGaAs matrix layer. It was confirmed that the QDs can be controlled in size and vertical alignment by changing the spacer layer thickness. The external quantum efficiency showed a clear increase in the longer wavelength range due to an additive contribution from the QD layers.

© 2017 Optical Society of America

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