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  • OSA Advanced Photonics Congress (AP) 2020 (IPR, NP, NOMA, Networks, PVLED, PSC, SPPCom, SOF)
  • OSA Technical Digest (Optica Publishing Group, 2020),
  • paper JTu4C.3
  • https://doi.org/10.1364/NOMA.2020.JTu4C.3

Investigation of Optoelectronic and Band-gap of Niobium Doped Titanium Dioxide Film Deposited by Electron-beam Evaporation with Ion-beam Assisted

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Abstract

This research investigated the optoelectronic and band-gap of Nb doped TiO2 film deposited by electron-beam evaporation with ion-beam assisted. TiO2 mixed with Nb2O5 were prepared to two types of powder and pellets for evaporated material.

© 2020 The Author(s)

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