Unraveling the Quality of the Active Region in GaN/InGaN Green LEDs Using Capacitance-Voltage Measurements

Dhiman Nag; Ray-Hua Horng; Apurba Laha

doi:10.1364/PVLED.2021.PvTu4C.4

OSA Advanced Photonics Congress 2021
OSA Technical Digest (Optica Publishing Group, 2021),
paper PvTu4C.4
•https://doi.org/10.1364/PVLED.2021.PvTu4C.4

Unraveling the Quality of the Active Region in GaN/InGaN Green LEDs Using Capacitance-Voltage Measurements

Dhiman Nag, Ray-Hua Horng, and Apurba Laha

Optical Devices and Materials for Solar Energy and Solid-state Lighting 2021

Washington, DC United States
26–29 July 2021
ISBN: 978-1-943580-94-1

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Light Emitting Diodes II (PvTu4C)

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D. Nag, R. Horng, and A. Laha, "Unraveling the Quality of the Active Region in GaN/InGaN Green LEDs Using Capacitance-Voltage Measurements," in OSA Advanced Photonics Congress 2021, B. Yang, F. Leo, A. Tauke-Pedretti, S. Arafin, M. Clerici, L. Caspani, L. Busse, M. Kats, J. Fan, W. Ming (Steve) Lee, D. Caplan, N. Parsons, W. Freude, C. Tremblay, D. Hillerkuss, K. Igarashi, H. Elgala, N. Guerrero Gonzalez, R. "Patty" Stabile, K. Jaeger, R. Saive, H. Aziz, and H. Tan, eds., OSA Technical Digest (Optica Publishing Group, 2021), paper PvTu4C.4.

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Abstract

CV measurements are carried out on InGaN multi-quantum well LEDs. Results obtained at lower frequencies exhibit strong evidence of defect-assisted carrier transitions. This technique can be employed for assessing quality of multi-quantum well LEDs.

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