Effect of substrate bias on roughness of Mo/SiO2 multilayers

C. Walton; J. B. Kortright

doi:10.1364/PXRAYMS.1994.MC.10

Physics of X-Ray Multilayer Structures
Technical Digest Series (Optica Publishing Group, 1994),
paper MC.10
•https://doi.org/10.1364/PXRAYMS.1994.MC.10

Effect of substrate bias on roughness of Mo/SiO2 multilayers

C. Walton and J. B. Kortright

Physics of X-Ray Multilayer Structures 1994

Wyoming United States
14–17 March 1994
ISBN:

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Invited Review 1/Poster Session 1 (MC)

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C. Walton and J. B. Kortright, "Effect of substrate bias on roughness of Mo/SiO2 multilayers," in Physics of X-Ray Multilayer Structures, Technical Digest Series (Optica Publishing Group, 1994), paper MC.10.

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Abstract

Multilayers of Mo and SiO₂ were grown by magnetron sputtering with layer d-spacings of 20-40Å and fraction Mo about γ= 0.4. Dc biases of -120V were applied during the entire deposition time for some samples. Layer roughness was studied by specular and non-specular x-ray diffraction. In the non-specular scans the bias was observed to increase the peak-background ratio from about 10² to about 10³. This is interpreted to show a decrease in interface roughness due to the bias.

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