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  • Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies
  • OSA Technical Digest (CD) (Optica Publishing Group, 2007),
  • paper JThD21

Intersubband Transition of AlN/GaN Quantum Wells in Optimized AlN-based Waveguide Structure

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Abstract

We achieved low-power saturation of intersubband absorption at 1.5 μm with AlN-based AlN/GaN quantum wells. By optimizing the etching condition of waveguides, the saturation energy was reduced by a factor of 3

© 2007 Optical Society of America

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