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Optica Publishing Group
  • Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies
  • OSA Technical Digest (CD) (Optica Publishing Group, 2007),
  • paper JTuA91

Emission Intensity Improvement of InGaN Ultraviolet Light-Emitting Diodes Grown on Wet-Etched Sapphire Substrates

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Abstract

High-brightness and high-efficiency GaN-based light-emitting diodes (LEDs) have attracted great attention because of their vital roles in full-color display and solid-state lighting. For the latter application, ultra-violet LED (UV LED), which pumps red-green-blue phosphors to generate white light, is expected to give good color rendering and power conversion efficiency. However, high threading dislocation density, on the order of 109 cm-2, in LEDs grown on sapphire substrates degrades the internal quantum efficiency and lifetime significantly [1]. In particular for UV LEDs which have less carrier confinement quantum structure, their emission efficiency is more sensitive to dislocation density than the blue and green ones. Reducing dislocation density in the active layer is thus an important task for developing high-brightness UV LEDs. There are many growth techniques, such as epitaxy lateral overgrowth (ELOG) [2], pendeo epitaxy [3], facet-controlled epitaxial lateral overgrowth (FACELO) [4], and lateral epitaxial on patterned substrates (LEPS) [5], have been proposed to reduce the dislocation density in GaN epilayers. Although the overgrowth technique can dramatically improve crystalline quality, the requirement of two-step growth procedure is time-consuming and yield-killing. Maskless patterned sapphire substrate (PSS) fabricated by dry etching process can alleviate the aforementioned issues to some extent. However, the dry etching process is slow and causes surface damage. In this work, a wet etching process with high etching rate is used to fabricate PSSs. The optical properties of 400 nm UV LEDs prepared on the PSSs with different etching depth are investigated.

© 2007 Optical Society of America

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