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Conferences > Photonics > 2012 > WPo > WPo.50

Polarization-Doped InGaN Based Blue Light-Emitting Diode with Reduced Efficiency Droop

Sonachand Adhikari, Suchandan Pal, and C Dhanavantri

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Abstract

GaN/InGaN based light-emitting diode (LED) is designed exploiting the recently-discovered polarization-induced doping phenomena in III-nitride semiconductors. LED structure employing InGaN barrier, combined with the polarization-induced doped electron-blocking layer (EBL) shows promising results.

© 2012 Optical Society of America

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