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Optical Characteristics of Type-II InGaAs/GaAsSb QW Heterostructure under Electric Field

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Abstract

This paper reports electric field effect on optical characteristics of type-II InGaAs/GaAsSb QW heterostructure. To simulate the optical gain, k.p technique is employed to determine the wavefunctions and carriers densities in respective bands responsible for the optical transitions. The results suggest that optical gain and wavelength can be tuned by varying the electric field.

© 2016 Optical Society of America

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