Abstract
The effect of photonic crystal cavities on the emission spectrum of InAs quantum dot is presented here. The cavities are designed by FDTD simulations, fabricated by electron beam lithography followed by dry and wet etching steps and cavities with QD defect are characterized by microphotoluminescence. The Quality factor reported is ∼ 5900 at 4K.
© 2016 Optical Society of America
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