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Optica Publishing Group
  • Quantum Electronics and Laser Science Conference
  • OSA Technical Digest (Optica Publishing Group, 1989),
  • paper MBB1

Electroabsorption and electrorefraction In InGaAs/lnAIAs waveguides containing asymmetric coupled quantum wells

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Abstract

Recently the optical properties of asymmetric coupled-quantum-well systems have received a great deal of attention.1–4 In the asymmetric-well system, the real-space indirect transition between the wide and narrow wells (Fig. 1) contributes to the electroabsorptive and electrorefractive properties of the system. The important feature to note is that this interwell transition is the lowest-energy transition in the system at electric fields higher than the resonance field and can be made to dominate the system’s below-band gap optical properties. The absorption characteristics of this transition depend on the geometry of the system. In general, as the electric field increases beyond resonance, the strength of the interwell transition decreases at a rate determined by the thickness of the tunnel barrier.

© 1989 Optical Society of America

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